Structural and transport properties of Y<sub>1-x</sub>(Dy)<sub>x</sub>PdBi (0 ≤ x ≤ 1) topological semi-metallic thin films
نویسندگان
چکیده
We report the effect of 4f electron doping on structural, electrical and magneto-transport properties Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2, 0.5, 1) thin films grown by pulsed laser deposition. The leads to lattice contraction which increases from 0% for parent x =0 sample approx 1.3% x=1 with increase in doping. transport measurements show a typical semi-metallic behaviour temperature range 3K 300K sharp drop resistivity at low temperatures (less than 3K) all samples. Magnetotransport Shubnikov de-Hass oscillations high magnetic fields demonstrate that these topologically non-trivial samples, induced plays an active role modifying Fermi surface, carrier concentration effective mass. There is uniform suppression onset superconductivity increased possibly related increasing local exchange field arising electrons Dy. Our results indicate we can tune various band structure parameters YPdBi f strained surface dominated relativistic temperatures.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0063996